Abstract
The preparation of 1-inch double-sided YBCO thin films by simultaneous sputtering from a single target is reported. By rotating the substrate around the rod of the substrate holder and the normal of the substrate, YBCO thin films were simultaneously deposited on both sides of 1-inch (100)LaAlO 3 substrate from a single inverted cylindrical sputter gun. The T C0 values of the YBCO thin films on both sides of the wafer were 90.3 and 90.4 K, respectively. The transition width was 0.8 K. The microwave surface resistance, R s (77 K, 10 GHz), of the YBCO thin films on both sides of the wafer were 330 and 400 μΩ, respectively. The uniformity of R s values over the whole 1-inch wafer is good and the properties of YBCO thin films were found to be very similar on both sides of the wafer.
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