Abstract
YBCO thin films were fabricated in situ on R-plane sapphire with YSZ buffer layers by inverted cylindrical magnetron sputtering. The films with , transition width , surface microwave resistance at 10 GHz and critical current density at 77 K were routinely fabricated at optimum deposition temperature and gas mixture pressure. The relations between the growth conditions, microstructure and electrical properties of YBCO thin films were investigated for a wide range of deposition temperatures. The variation of the film properties with deposition temperature is substantiated by a thorough analysis of changes in the microstructure and state of Cu-rich particles on the surface YBCO thin films. The particle formation observed in our experiment can be described using the classical thin film nucleation and growth model based on the concept of capture zones.
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