Abstract
The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinement with a quantum well were formed by molecular-beam epitaxy. The study of characteristics of laser diodes with a wide contact (100 µm) showed that the power corresponding to the catastrophic degradation of mirrors may attain nearly the highest values ever achieved (20 MW/cm2) that were previously obtained for laser diodes based on InGaAsP/GaAs heterostructures alone.
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