Abstract

In the current manuscript we assess to what extent X-ray photoelectron spectroscopy (XPS) is a suitable tool for probing the dipoles formed at interfaces between self-assembled monolayers and metal substrates. To that aim, we perform dispersion-corrected, slab-type band-structure calculations on a number of biphenyl-based systems bonded to an Au(111) surface via different docking groups. In addition to changing the docking chemistry (and the associated interface dipoles), the impacts of polar tail group substituents and varying dipole densities are also investigated. We find that for densely packed monolayers the shifts of the peak positions of the simulated XP spectra are a direct measure for the interface dipoles. In the absence of polar tail group substituents they also directly correlate with adsorption-induced work function changes. At reduced dipole densities this correlation deteriorates, as work function measurements probe the difference between the Fermi level of the substrate and the electrostatic energy far above the interface, while core level shifts are determined by the local electrostatic energy in the region of the atom from which the photoelectron is excited.

Highlights

  • In the field of organic electronics, chemically bonded self-assembled monolayers (SAMs) have been used to change the electronic properties of a huge variety of interfaces [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18]

  • For understanding the correlation between X-ray photoelectron (XP) spectra and interface dipoles, it is useful to first consider how interface dipoles impact the electronic properties of a system consisting of an inorganic substrate and a chemically bonded monolayer

  • In the present contribution it is shown that X-ray photoelectron spectroscopy is a suitable tool for determining interface dipoles in densely packed self-assembled monolayers

Read more

Summary

Introduction

In the field of organic electronics, chemically bonded self-assembled monolayers (SAMs) have been used to change the electronic properties of a huge variety of interfaces [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18] They have allowed the realization of n-type organic transistors by screening interface traps [3], they have been used to shift turn-on voltages of devices by several dozens of volts via the introduction of polar and reactive groups into transistor channels [4,5,6,7], and they have been employed for tuning injection barriers by adsorption on electrode surfaces, changing contact resistances by orders of magnitude [8,9,10,11,12,13,14,15,16,17,18]. It can be used as a tool for systematically determining the “interface dipole” at the interface between a substrate and an adsorbate

Computational Methodology
Energetics of a Metal–SAM Interface
Investigated Systems
Energetic Shifts Due to Variations in the Interface Dipole
Influence of Different Tail Groups on the XP Spectra
Coverage Dependence
The Role ofall
Conclusions
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call