Abstract
A potentiometric sensor platform has been used for NO2 detection at room temperature by measuring the adsorption induced surface work function changes in In2O3 thin films deposited on Si using a solution based process. The highly resistive films were unsuitable for amperometric detection of NO2; however, significant work function changes of ∼30mV were measured for ∼50s of exposure to 70ppm NO2, and detection down to 600ppb (parts per 109) was possible. A model for the transient response was developed, which satisfactorily fits the experimental data. Acceleration of the desorption transient under ultraviolet illumination has also been investigated.
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