Abstract
The discovery of the ferroelectricity of HfO<sub>2</sub> in 2011 has opened up new avenues for the application of ferroelectric technology. With the stability of ferroelectricity in a few nm scales, HfO<sub>2</sub> has become a valuable material for the development of next-generation electronic memory devices. The unique structure of HfO<sub>2</sub> gives rise to various ferroelectric properties and behaviors that can be utilized in different types of devices such as ferroelectric field effect transistors (FeFETs), negative capacitance field effect transistors (NCFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric capacitors (FeCAPs). In this review, we explore the potential of HfO<sub>2</sub> for the high-density storage of data and low-energy consumption in next-generation devices. We demonstrate the operating principles and strengths of HfO<sub>2</sub> in various device applications, shedding light on how this material can help address the electronics industry's current challenges.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
