Abstract
ABSTRACTPolycrystalline silicon is frequently deposited on single crystal silicon as a part of devices. The poly is used as both a dopant source and a low resistance contact in a modern method of fabricating high gain bipolar transistors. The randomness of polysilicon and its interface with the single crystal is an inherent source of differences among nominally identical transistors, however, and is a marked departure from the trend towards more and more perfect crystals that characterizes the rest of silicon technology.
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