The point defect engineering approaches for ultra-shallow boron junction formation in silicon

Abstract

When high energy heavy ions bombard a single crystal, such as MeV Si implantation in Si, the surface region becomes vacancy-rich, while interstitials are mostly distributed near the range of the implants. We have demonstrated that vacancy retards while interstitial enhances boron thermal diffusion in silicon. In this paper we will show experimental results on the modification of boron diffusivity by point defect engineering, and its application in ultra-shallow junction (10 nm) formation. In this paper, we will also show cluster ion, such as GeB and SiB, implantation in silicon, and two-stage annealing in forming ultra shallow junction in Si. RBS, channeling, nuclear reaction, and secondary ion mass spectrometry are used for this studies.