Abstract
This contribution presents the results of an X-ray photoelectron spectroscopy (XPS) study aimed at gaining further insight into the interactions between Si, Ti, TiN, and Pt. Our approach involves the sequential deposition of Ti, TiN, and Pt onto a clean, well-characterized Si(111) surface, a substrate known to react with Pt . These depositions were carried out in situ under ultra-high vacuum (UHV) in a chamber equipped to perform angle-resolved XPS (ARXPS) and various other types of characterization. It will be shown that layers of TiN only ca. 1 nm thick are sufficient to prevent interdiffusion between Pt and Si.
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