Abstract
This paper reviews some of the properties of quantum well lasers (QWLs), with emphasis on the two-dimensional origins of these. It is shown that two main effects determine the lowering of threshold current, namely the diminished density of states (DOS) (favourable factor) and the diminished optical confinement (unfavorable factor). The good operation of GaAs-GaAlAs QWLs also relies on more subtle effects such as the square 2D DOS, the enhanced optical matrix element, the high quantum efficiency... The poor operation of GaInAs based quantum well lasers is due to the detrimental Auger effect which is larger than in 3D lasers because of the higher carrier densities at which QWLs operate. Several other useful properties of QWLs in the performance (high-frequency, narrow-line) and manufacturing fields are discussed. Problems and advantages of 1 and 0D quantum-wire and quantum-box lasers are briefly evaluated.
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