Abstract
Pt/BiFe0.95Mn0.05O3/Pt memory devices show stable bipolar resistive switching characteristics with a resistance ratio of about 10 and a retention time of more than 103 s. Based on the analysis of current conduction, oxygen vacancies are supposed to play an important role in the formation of conducting path, and the temperature dependence of the resistance in the low‐resistive state demonstrates that the resistance increases with temperature slightly. Additionally, on increasing the compliance current during the SET process, the resistance in the low‐resistive state decreases while the RESET current increases. However, the RESET voltage is observed to be independent of the compliance current. These results can be explained by the conductive filament mechanism originating from the trapping and detrapping of electrons.
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