Abstract
The photoluminescent behavior of N+ and Zn+ implanted GaAs1-xPx has been investigated at 4.2 K. The experimental results show that the alloy composition x, at which N-Zn transition completely becomes N bound excitonic recombination, depends on the nitrogen and zinc impurity concentration.Using Campbell localized model, we calculated the probability ratio of N-Zn transition to N bound excitonic recombination as a function of composition and N, Zn impurity concentration.At 1.8 K, we have clearly observed the typical spectra of N-Zn transition and N bound excitonic recombination in the same sample.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
