Abstract
Nitrogen doped ZnO films are directly fabricated by the thermal oxidation ofZn3N2 films. Zn3N2 films are prepared by plasma-assisted metal-organic chemical vapour deposition(PA-MOCVD). By comparing with undoped ZnO photoluminescence spectra, amuch stronger bound exciton emission due to a neutral nitrogen acceptor(A0X) is observed at low temperature. The neutral acceptor level is located at 130 meV above thevalence band maximum. To demonstrate the quality of ZnO:N thin films as a p-type, aZn3N2/n-Si heterojunction structure was first fabricated. With an increase of oxidation temperature,the structure has gradually shown p–n junction rectification characteristics fromI–V measurements.
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