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Abstract
The photoionization has been considered as an optical transition from the impurity ground state to a continuum state belonging to a conduction band in semiconductors. The dependence of the photoionization cross-section on photon energy is calculated for a shallow donor impurity taking into account the effect of the electron mass anisotropy. The interaction between the electron and the longitudinal optical (LO) phonon is taken into account using Fröhlich's coupling and applying the Lee-Low-Pines transformation. The cross-sections involving zero or one phonon are evaluated for a shallow donor in CdS and it is shown that the cross-section is very sensitive to the electron mass anisotropy, the electron–phonon coupling, and their combined effect.
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