The Photoelectron Study of Surface States on InP(100)

Abstract

Publisher Summary For the first time, the dispersion of the surface state was experimentally determined on the (4×2) reconstructed (100) face of InP. The existence of the surface state is connected with (4×2) reconstruction. A detailed understanding of the electronic structure on different III–V semiconductor surfaces is of the considerable importance in rapidly developing VLSI technology. Analogously, to other III–V semiconductors, this surface state is prescribed to dangling bonds of phosphorus atoms terminating the face. No surface state has been identified on in rich unreconstructed face. The studies of the surface states on InP have been focused on (110), (111), and (111) surfaces. For (110) face, the surface state was found on the top of the valence band in contrary to (111) face where the surface state was observed in the gap for the P terminated face. For (100) face/the surface structure in the density of states was experimentally determined above the top of valence band by angle integrated photoemiseion spectroscopy. The surface electronic structure has been studied on (100) face by angle-resolved photoemission spectroscopy. The surface state was found in the gap and its dispersion was determined along direction of the surface Brillouin zone.