The photocurrent-voltage characteristic simulated of resonant tunneling photodiodes

Abstract

The resonant tunneling photodiodes based on an AlGaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated. Photons with the wavelength λ = 1.54 μm lead to hole accumulation close to the double barrier inducing a voltage shift of the current–voltage curve which strongly depends on the bias voltage. It was found that the peak current shifting to high voltage as the temperature decreased. In addition, the capacity–voltage (C–V) characteristic was simulated under different work temperatures and results showed the higher capacitance gotten at low bias (about 0.3 V) and room temperature.