Abstract
Current bumps in the current-voltage characteristics of amorphous semiconductor double barrier structures have previously been associated with a resonant tunneling process through quantized levels in the well region of the structure. We investigate the perpendicular transport through a-Si:H/a-SiNx:H single (SB) and double (DB) barrier structures grown by glow discharge. Current bumps are observed in the I-V characteristics of both SB and DB structures at 77 K which suggests a different transport mechanism than previously proposed. We propose that the first current bump is simply a transition from a low-field (space-charge-limited) transport mechanism to a high-field (multiple hopping) transport mechanism. The additional bumps are associated with the energy-dependence of the density of localized states in the a-SiNx:H and a-Si:H.
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