Abstract
ABSTRACTTo date the photocarrier grating (PCG) technique is widespread among a- Si:H researchers. This technique is presently the only available technique for the determination of the minority carrier diffusion length in materials where this length is in the submicron range. The basic idea or the PCG technique will be presented, and results which follow its fruitful use in the study of a-Si:H materials and devices will be reviewed. Finally some future studies of these materials by the PCG method will be suggested.
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