Abstract
A tight-binding formulation is used to estimate both the electron-phonon matrix element and the intervalley phonon-mediated exchange interaction in bulk silicon. The resulting interactions are about an order of magnitude too small to be able to account, of their own, for the broken symmetry states observed in inversion layers at the Si/SiO 2 interface, where the selection rules are relaxed and other modes are available to enhance the interactions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
