Abstract
The amount of phonon scattering as a function of specimen thickness is determined for a clean silicon sample, free from amorphous surface layers, by measuring the diffuse scattering in energy-filtered convergent-beam diffraction patterns. It is found that for a 25 nm thick sample, only 7.5% of the intensity scattered to less than 18 nm −1 is phonon scattered. This means that in a typical high-resolution sample most of the diffuse scattering is caused by surface amorphous layers rather than phonon scattering.
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