Abstract
ABSTRACT The phase transition characteristic of the vanadium dioxide (VO 2 ) film prepared by ion beam enhanced deposition (IBED) method was s tudied. The lattice distortion hypothesis was s upposed to simulate resistance change of the VO 2 polycrystalline film with temperature increasing and the simulation result was explained based on Landau theory. Due to the present of argon atom in interstitial site of VO 2 lattice or grain boundary, the semic onducto - to-metal phase transition began at 48 o C in some grains, obviously lower than the phase transition temperature of VO 2 single crystal. Key words : VO 2 polycrystalline film, ion beam enhanced deposition, lattice distortion, Landau theory 1. INTRODUCTION Vanadium dioxide (VO 2 ) exhibits a semiconductor-to-metal phase transition at a critical temperature of 68 o C, accompanied by a dramatic chang in resistivity ( 5R max =10 ) and optical properties (from transmission to reflection). VO 2 at high temperature has the tetragonal (P4
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