Abstract

Vanadium oxide film is a common sensing film for infrared detector and uncooled infrared imaging devices, its stability directly affects the use of the thetse infrared devices.In this paper, high and low temperature cycles fatigue tests was used to check and compare the stability of the vanadium oxide films formed by different methods.The change of the temperature coefficient of resistance(TCR) and the room temperature resistance were measured and compared for the vanadium oxide film prepared by reactive sputtering and vanadium dioxide films by Ion Beam Enhanced Deposition(IBED) method. The result indicated tungsten doped Vanadium dioxide film by IBED is the most stable and has a higher TCR.

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