Abstract
Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter-base and collector-base junctions, minimizing RC parasitics and increasing fmax to 500 GHz. The process also provides a microstrip wiring environment on a low-ϵr dielectric substrate. Demonstrated small-scale ICs in the process include lumped and distribute amplifiers with bandwidths to 85 Hz, 48 GHz static frequency dividers, and 50GHz AGC/limiting amplifiers.
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