Abstract
Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 820 GHz, the highest reported for any transistor. The process also provides a microstrip wiring environment on low-/spl epsiv//sub r/ dielectric substrate. Demonstrated small-scale ICs in the process include lumped and distributed amplifiers with bandwidths to 85 GHz, 48 GHz static frequency dividers, and 50 GHz AGC/limiting amplifiers.
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