The performance of dual gate LDMOS device with STI & sinker

Abstract

In this brief, we have proposed a dual gate (DG) laterally double diffused metal oxide semiconductor (LDMOS) with shallow trench isolation (STI) and sinker at the source side to reduce the leakage, provide isolation and found a significant improvement in device when compare with the conventional device. Both devices have been designed and simulated with ATLAS SILVACO simulator. All the dimensions and doping of both devices are same except gate length and channel doping. If we have taken the same channel doping then not such an improvement occurs because peak of trans-conductance decreases. We have taken distance between two gates of DG device is small as 0.4 um to overcome the island and overlapping. The DG device provide high BV and low on resistance as compare to conventional device which is the most important for circuit application. DG device has high ft and fmax as compare to conv device which is necessary for RF applications. DIBL value also decreases than conv device due to STI and sinker. The DG device has low V th as compare to conv device. Hence DG device gives the better performance than conventional (conv) device.