Abstract
In this paper, an analytical modeling of a new structure called Dual Material Gate (DMG) Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) is presented, which combines the advantages of LDMOS and DMG MOSFET. The expressions for the surface potential and electric field under the two poly-silicon gates are derived. Then, a modeling strategy for channel current is presented for the DMG-LDMOS. Channel current model includes the velocity overshoot effect, and avoids calculating the nonlinear drift resistance which is prohibitively difficult to value for LDMOS. The model results are verified by comparing them to simulated results obtained from the device simulator MEDICI..
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
