Abstract
The modulation of the potential barrier of an isotype heterojunction by the incorporation during epitaxial growth of thin, heavily doped n and p regions either side of the heterointerface has been investigated by computer modelling. The resulting device structure, known as a doping interface dipole or DID, was first proposed by Capasso and co-workers (1985) as a means of introducing a bias-dependent pseudo-band offset in heterojunction devices. The results presented here predict how this bias dependence varies with the doping dipole parameters and the material properties of the host heterojunction, chosen here to be a pseudomorphic Si1-xGex/Si p-isotype heterojunction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
