Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic–inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique

Abstract

Graphical abstractDisplay Omitted Highlights? The first report on the growth and characterization of p-CuPc films via chemical spray technique. ? We report a new organic-inorganic (p-CuPc/a-Si/c-Si) hybrid heterojunction. ? We investigate the electrical properties of p-CuPc/a-Si/c-Si hybrid heterojunctions. ? The effect of amorphous Si on the electrical properties of this heterojunction has been determined. ? We determine the photovoltaic properties of the hybrid heterojunction for photovoltaic devices. This investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon substrates using chemical spray pyrolysis technique. The structural and morphological properties of the amorphous silicon thin films and CuPc thin films were investigated by XRD, RAMAN and FEG-SEM analysis. The XRD pattern indicated that the films were polycrystalline in nature of CuPc thin films that crystallized in the orthorhombic α-phase structure. We determined 17 Raman active peaks belong to CuPc thin films and our results are compatible with polarized Raman spectra. We have characterized the electrical and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag heterojunction devices. The measured electrical parameters were used to determine the conduction mechanisms of these heterojunctions. Electrical parameters such as barrier height ?B, diode ideality factor ?, series resistance Rs and shunt resistance Rsh were determined from the I-V characteristic in the dark conditions for Ag/p-CuPc/a-Si/n-Si/Ag and Ag/p-CuPc/a-Si/p-Si/Ag heterojunctions were found to be 2.5-5.7, 0.95-0.99eV, 26-28.6k?, and 9.2-3.7M?, respectively. The photovoltaic properties of organic-inorganic hybrid heterojunction devices were evaluated by current-voltage characteristics under illumination. The hybrid heterojunctions shows a photovoltaic behavior and the photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as Voc=167mV and Jsc=18.4mA/m2, respectively. The Ag/p-CuPc/a-Si/c-Si/Ag hybrid heterojunctions can be using as a heterojunction photovoltaic devices.