The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant

P.V Seredin,D.L Goloshchapov,O.K Kosheleva,N.S Buylov,Y.A Peshkov,K.A Barkov,E.S Kersnovsky,A.M Mizerov,S.N Timoshnev,M.S Sobolev,D.V Serikov,A.I Chukavin,V.N Nevedomskiy,S.A Kukushkin

doi:10.1016/j.apsusc.2025.162571

The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant

P.V Seredin, D.L Goloshchapov + Show 12 more

https://doi.org/10.1016/j.apsusc.2025.162571

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Journal: Applied Surface Science

Publication Date: Jan 1, 2025

#Gallium Atoms #Surface Passivation #Peculiarities Of Growth #Direct Nitride #Silicon Substrates #Gallium Indium #Direct Growth #Gallium Nitride Growth #Nitride Growth #Gallium Nitride

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The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant