Abstract
The patent provides one method for preparing of CuInSe2 (CIS) photoelectric thin film used in solar cell. It belongs to the field of photoelectric film preparation technology. The patent includes the following steps. First clean glass substrate; Secondly dissolve CuCl2•2H2O, InCl3•4H2O, SeO2 by different solvents, then mix the solution and adjust the pH of solution to obtain homogeneous precursor solution; Thirdly drop the precursor solution to the glass substrate, spin coating and dry for precursor film. Then put the precursor film into sealed container which contains the hydrazine hydrate (N2H4•H2O), and keep the sample not in contact with hydrazine. Finally the sample is heated at some temperature, which makes it cool and dry naturally, CuInSe2 photovoltaic thin film is obtained. The method used in the patent does not require high temperature, high vacuum conditions and sophisticated equipment. So it has the advantages of low cost, high efficiency and simplicity. It is easy to control the composition and structure of the CuInSe2 photovoltaic thin film. And the CuInSe2 photovoltaic thin film is pure phase, continuous and uniform. So it is one feasible process to prepare high performance copper indium selenide thin film.
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