Abstract
Co-sputtered Cu-In precursors were used as the backing materials, and selenium powder was employed as the raw materials. Five kinds of representative or innovative selenization schemes, including single selenium source, double selenium source, powder spraying, selenizing and annealing step by step or simultaneously, were applied to grow CuInSe2(CIS) thin films. The influence of selenium source location and temperature rising methods on the property of CIS films was evaluated. The similarities and differences in the morphology, composition and phase structure among different methods were compared. The relationship between selenization temperature, anneal temperature, anneal time and the composition of CIS thin films was researched. The rules how element percent alters with the selenization and anneal condition are established, which can provide a reference to better control the composition and phase structure of CIS thin films.
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