Abstract
Abstract The strong polarization fields in the InxGa1-xN/GaN quantum well (QW) LEDs, separates the electrons and holes spatially, which decreases the optical performance. Various non-square indium profiles of such QWs are studied to improve the overlap of electron and hole wavefunctions. We have investigated the overlap of electron and hole wave functions, band structures, field distributions and hole concentration of the symmetrically staggered, trapezoidal and graded QW LEDs, in the emission of the blue spectral region. The striking new results are presented with suitable depictions and discussions. In the trapezoidal and graded QW structures, the overlap of electron and hole wavefunctions is significantly increased as compared to the symmetrically staggered QW. The overlap of electron and hole wavefunctions of the graded structure is even higher than the trapezoidal QW. The best results are obtained for the graded structure, where the overlap function and hole concentration are significantly increased as compared to other QW structures. An important feature emerges from the graded structure that the change of the peak emission energy with increase in the current density is minimized.
Published Version
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