Abstract
Doping-modulated and compensated hydrogenated amorphous silicon (a-Si:H) are viewed as aggregates of p-type and n-type regions. Experimental evidence is presented in support of the following model for explaining the persistent photoconductance (PPC). A different response to light induced Staebler-Wronski defects first makes the p-regions less p-type at low light exposures wich transfers electrons to n-regions causing PPC. At high exposures n-regions become less n-type wich reduces PPC.
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