Abstract
In this study we have performed N, P, Al, B, V, Si, and C implantations to obtain p-type, n-type, and semi-insulating regions in 6HSiC crystals. Post-implantation annealings were performed in either a conventional ceramic processing furnace or using microwaves in the temperature range of 1200–1700°C. The material was characterized by secondary ion mass spectrometry, Hall, Rutherford backscattering via channeling, and two-probe I–V measurements. N-type regions with a maximum room temperature electron concentration of 2 × 10 19 cm −3 were obtained using N and P implantations. Though p-type regions were obtained by Al and B, the room temperature hole concentrations were low due to the deep acceptor levels associated with these impurities. The Si and C bombardment gave regions with resistivities as high as 10 9 Ω cm compared to 1 Ω cm in the starting material.
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