The orientation of (Pb,La)TiO3 thin films grown on different substrates by multi-ion-beam reactive cosputtering technique

Abstract

Highly oriented or epitaxial (Pb,La)TiO3 thin films have been grown on substrates of amorphous optical glasses and single crystal silicon (111), sapphire (0001) and (1102) wafers by a multi-ion-beam reactive cosputtering (MIBRECS) technique. The deposition conditions, such as incident Pb/Ti ratio, will greatly affect the orientation of PLT thin films. It was found that in addition to other advantages, highly oriented thin films can easily be grown by using this technique. MIBRECS may also be a promising technique for investigating the growth mechanisms of multi-component oxide thin films deposited by ion beam sputtering.