Abstract

Abstract The orientation of diamond crystals and films synthesized by the combustion flame method has been investigated. Diamond crystals were formed on silicon (111) wafers mounted on water-cooled copper blocks. In order to know the effect of substrate temperatures on the crystal orientation, only the substrate temperature was altered; all other conditions were kept constant. Scanning electron microscopy and X-ray diffraction have been used to characterize the crystals. It was found that crystal face orientation was strongly dependant upon the substrate temperature. The (111) face was grown predominantly at relatively low temperature and the (100) face was dominant at higher substrate tempratures. The mechanism of high (220) intensity X-ray diffraction at higher temperatures was not clearly demonstrated.

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