Abstract
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers (MLs) derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), and high resolution x-ray diffractometry (HRXRD) techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly localized two-dimensional variable range hopping (2D-VRH) transport under potential fluctuation disordered conditions (≳4 ML) is clearly observed. This observation is in good agreement with the SIMS and HRXRD data. Results from the intermediate case with 2–3 MLs are also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
