Abstract
We have used a microlithographic modeling program to investigate the optimization of a contrast enhancement material (CEM). The CEM parameters were varied over a wide range and for each case the exposure intensity was adjusted to produce a resist profile with the prescribed dimension. The slope of the resist profile constitutes a measure of the contrast and should be as high as possible. We demonstrate the trade-off between maximizing this quantity and keeping the exposure penalty as low as possible. The latitude to exposure variations will also be discussed.
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