Abstract
GeSe2 Nano-Films (GeSe2NFMs) were prepared by chemical vapor deposition (CVD). The nanostructures of the GeSe2NFMs were revealed by X-ray diffraction and Raman spectroscopy, respectively. The linear optical properties of the samples have been studied by absorption spectroscopy. The nonlinear optical properties of the GeSe2NFMs have been studied by Z-scan technique with femtosecond pulses at the wavelength of 1030 nm. The measured band gap of GeSe2NFMs is 2.33eV, and the nonlinear absorption coefficient βeff is about 1.344*10−7 cm/W, which is a saturated absorption. In addition, in the fluorescence emission spectrum of GeSe2NFM, we found emission peaks in the red and infrared light regions with a wavelength of 760 nm. We found that GeSe2NFMs prepared by CVD has a larger band gap and a larger nonlinear absorption coefficient than the doped GeSe2. These studies indicate the application of GeSe2NFMs in laser emitters and nonlinear optical devices, and also provide a reference for subsequent research on nonlinear optical characteristics.
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