Abstract
The optical absorption in flash-evaporated CuInTe 2 epitaxial layers was studied in the photon energy range from 0.6 to 3.0 eV. CuInTe 2 was found to be a direct gap semiconductor with a gap energy of 1.06±0.01 eV and a spin-orbit splitting of the valence band of 0.60±0.02 eV at room temperature. An optical transition found at about 2.2 eV is ascribed to transitions from the copper d states in the valence band.
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