Abstract
Measurements of optical absorption suggest a two level model for the dislocation states. One of them is 0.1 eV below the conduction band edge, the other one 0.1 eV above the valence band edge. A dangling bond level does not appear directly in optical measurements. The reason is probably the poor overlapping of the dangling bond state with band states. The maximum electrostatic charging in the environment of the dislocation line is found to be much smaller than it is commonly assumed. Messungen der optischen Absorption lassen auf ein Zwei-Niveau-Modell der Versetzungs-zustande schliesen. Ein Zustand liegt 0,1 eV unterhalb der Leitungsbandkante, der andere 0,1 eV oberhalb der Valenzbandkante. Ein dangling-bond-Zustand wird bei optischen Meassungen direkt nicht gefunden, vermutlich, weil der dangling-bond-Zustand schlecht mit Bandzustanden uberlappt. Die grostmogliche elektrostatische Aufladung der Umgebung der Versetzungslinie ist nach diesen Messungen viel geringer als bisher angenommen wurde.
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