Abstract
N-type GaAs doped with sulphur (2.8 × 10 18 cm -3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As anti-site defect appears, grows and subsequently saturates at a concentration of about 10 18 cm -3. The saturation concentration is about one third of [ n] in most samples. The defects are stable on annealing to 500°C but are not observed in various irradiated p-type samples. It is suggested that grown-in defects such as [V Ga-As Ga-V Ga] capture Ga interstitials during the irradiation and are thereby converted to the simpler anti-site defect.
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