Abstract
An n-type sample of GaAs grown by the LEC technique has been irradiated with 2 MeV electrons in stages at 300K. At each stage the concentrations of AsGa anti-site defects and (BGa-Asi) complexes (B(1) centres) were monitored by EPR and IR absorption measurements respectively. AsGa defects were observed prior to B(1) defects demonstrating that the former centres are not generated by arsenic interstitial migration. The authors conclude that grown-in defect complexes in the GaAs are converted into AsGa defects probably by the capture of mobile gallium interstitials.
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