Abstract
NV-10SD is a high-current ion implantation system newly developed to satisfy recent VLSI process requirements. The particulate increase during processing is less than 20 particles per 6 in. wafer (larger than 0.28 μm). The guaranteed throughput of the system is more than 220 6 in. wafers/hour for a 1 × 10 15 ions/cm 2 dose, and 80 6 in. wafers/hour for a 1 × 10 16 ions/cm 2 dose. The maximum wafer temperature during a 160 keV, 15 mA (2400 W), 1 × 10 16 ions/cm 2 dose implantation is less than 100 ° C. The guaranteed beam current above 40 keV is more than 15 mA for phosphorus and arsenic and 1.8 mA for 10 keV boron. The system incorporates a new cylindrical target electron shower gun system. The shower reduces the voltage built up on the wafers to a level with very few charging-induced pattern failures. The system also has a machine automation controller which is capable of auto beam setup and tuning, process monitoring, host communication and remote control. Thus, the NV-10SD is fully compatible with no-operator process lines.
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