Abstract
High power ion implantation into photoresist coated wafers poses special problems for the process engineer. As the incoming ion enters the photoresist layer, molecules and atoms from the photoresist are liberated and become part of the background gas through which the ion beam must travel. Subsequent atomic collisions between the background gas atoms and the beam ions result in some degree of neutral beam flux which cannot be measured by conventional faraday systems. The Baton high current ion implantation systems utilize faradays to measure beam current and ion gauges to measure pressure simultaneously. The beam current and pressure measurements are combined to provide a means of estimating the degree of neutral particle flux and controlling dose rate based on these measurements. This paper describes the pressure compensated dose control concept, presents procedures for optimizing the control, and presents typical performance results.
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