Abstract
The binding energy of the nitrogen acceptor in zinc telluride is measured. The zinc telluride samples were grown by molecular beam epitaxy using a plasma source for nitrogen doping. The acceptor ionization energy at infinite dilution limit is deduced from Hall effect analysis to be 53.2±1.5 meV. This value agrees with that of the acceptor ground state energy obtained from photoluminescence spectra, 53.6±0.7 meV. The acceptor energy in strain-free material may be slightly higher due to some residual tensile strain in the samples.
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