The new route process of V3Ga mono-cored and multifilamentary wires using high Ga content Cu-Ga compound and V matrix precursor

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V3Ga compound is one of the attractive low activation materials for high magnetic field superconducting magnet in the several V-based compounds because V-based superconducting materials have shorter decay time of induced radioactivity and high field property above 20 T. V3Ga compound has not only high upper critical magnetic fields (Hc2) above 20 T as well as Nb3Sn but also better mechanical property. However, the present critical current density (Jc) property of V3Ga compound wire is insufficiency to apply for large high field magnet such as fusion application. In the previous study, V3Ga compound wire was mainly investigated ‘Diffusion process’ between Cu-Ga solid solution matrix within 20 at% Ga composition and V filament. Recently, we investigated the new route PIT process using high Ga content Cu-Ga compound to fabricate V3Ga mono-cored and multifilamentary wires in order to increase a volume fraction of synthesized A15 phase. It was confirmed that the thicker V3Ga layer formed along the boundary of Cu-Ga powder core and V matrix compared with previous diffusion processed samples in the case of the both mono-cored and mltifilamentary wires. And Hc2 property of the samples using high Ga content Cu-Ga compounds was increased with increasing of Ga content into Cu-Ga compounds, and it showed about 23.0 T which value was 2.0 T higher than conventional processed samples.