Abstract
Depletion width modulation electron spin resonance (DWM-ESR) together with junction capacitance techniques yield the total spin and charge change associated with the emission of electrons from deep defects in intrinsic a-Si:H. We find that, in contrast to n-type doped samples, the observed transition is from the D 0 to D + charge state near midgap. However, the magnitude of spin-to-charge change is too small for a defect having significantly positive correlation energy, U eff; rather it agrees with a nearly zero value of U eff(−20 meV < U eff < + 50 meV) between the singly and doubly occupied charge states.
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