Abstract
ABSTRACTDepletion-width-modulated (DWM) ESR spectroscopy and junction capacitance techniques were employed to investigate deep-defect states in various metastable states of 10 and 80 Vppm PH3-doped a-Si:H. From the joint application of these methods, we enumerate the change in total spin and charge associated with emission of carriers from states within the mobility gap resulting from a modulated bias voltage. We conclude that the magnitude of the modulated spin-to-charge ratio is nearly unity, consistent with earlier similar investigations of n-type a-Si:H, where the D-/D0 transition was shown to dominate. Furthermore, we present results of a previously unreported “quadrature” DWM-ESR signal of large magnitude under a wide range of experimental conditions. Similar related effects are also reported from spin- and capacitance-transient studies. These results clearly demonstrate that the changes in spin significandy lag corresponding changes in charge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
