Abstract
The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2.
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